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Hitachi is also considering using Episil Technologies Inc. of Taiwan as a foundry for transistors and ICs for television sets and consumer electronic products.

SG-8018CE 8.000000 MHZ TJHPA_Datasheet PDF

Hitachi is also considering using Episil Technologies Inc. of Taiwan as a foundry for transistors and ICs for television sets and consumer electronic products.

CALL (909) No. 647

HUNTSVILLE, ALA. — VMIC has introduced a pair of complementary boards for the 3U CompactPCI bus, respectively providing eight channels of optically coupled ac voltage input and eight of optically coupled ac voltage output. The VMICPCI-1120 input board is priced at $599 and the VMICPCI-2140 output board at $563. Both comply with the PICMG 2.1 hot-swap specification.

SG-8018CE 8.000000 MHZ TJHPA_Datasheet PDF

The VMICPCI-1120 is geared toward sensing/monitoring in various applications involving electrical current and voltages, including limit switch sensing, low-voltage detection, relay contact monitoring, relay coil voltage monitoring and current sensing. It provides 250-VRMS maximum voltage sensing, has a 3,000-V withstand test voltage, provides 8- or 16-bit data transfers and has a guaranteed temperature-compensated threshold level with hysteresis. The board reads all eight optically coupled ac inputs with 1 byte of data.

The input board has a turn-on voltage of 70 Vac rms and a turn-off voltage of 37 Vac rms. Maximum input current is 50 mA average, 140 mA surge and 500 mA transient. Input isolation is 3 kVac.

The VMICPCI-2140's eight optically coupled Triac-driven outputs provide a sustained 5,300 Vac rms of system isolation to a CompactPCl bus backplane. It has a maximum galvanic (channel-to-channel) isolation of 600 V sustained. Maximum output voltage is 250 VRMS and the board's outputs have a 300-mA current sink capability. Data transfers are 8, 16 or 32 bits wide. Switching time is 35 microseconds for turn-on, 50 microseconds for turn-off. Output isolation is 50 Megohms typical.

SG-8018CE 8.000000 MHZ TJHPA_Datasheet PDF

CALL (256) No. 619

SEOUL–Samsung Electronics Co. Ltd. this week plans to announce development of a 1-gigabit NAND flash memory prototype with 0.15-micron design rules. Samsung officials believe the Korean company is the first in the world to produce a NAND-based flash memory with 0.15-micron device feature sizes.

SG-8018CE 8.000000 MHZ TJHPA_Datasheet PDF

In addition to using the 0.15-micron process for 1-Gbit chips in the future, Samsung said it plans to apply the technology to low-cost 256- and 512-megabit flash devices. The 512-Mbit flash chips are slated to move into volume production in 2001.

Samsung did not disclose a production schedule for its 1-Gbit flash memory, but the company claimed it is now six months to one year ahead of its competition in developing the 1-Gbit generation. Samsung said it was able to leverage existing DRAM process technologies–such as the use of chemical mechanical planarization (CMP) tools–to produce the 1-Gbit flash prototype.

The new manufacturing company will be financed equally between the partners and by 2002 is expected to support more than $1 billion in annual sales, the companies said. Further expansion could be contracted out to third-parties, including foundries.

The jointly developed products will be marketed and sold separately to the companies' respective customers.

We are confident that this collaboration will allow Toshiba to accelerate its participation in the rapidly growing market for flash storage in such applications as digital still cameras, voice recorders, video games and silicon audio players,” said Yasuo Morimoto, president and chief executive of Toshiba's semiconductor company.

The companies expect to have a definitive agreement concluded by January.

CAMARILLO, CALIF. — Vitesse Semiconductor Corp. calls its VSC8151 the first fully integrated, multirate Sonet/SDH section terminator to include an integrated transceiver.


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