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Do not drive load more than 100V and 3A.

STM32F767IGK6-176-UFBGA-STMicroelectronics

Do not drive load more than 100V and 3A.

MJE350 is a TO-126 packaged PNP high voltage transistorMJE350 is a TO-126 packaged PNP high voltage transistor.

STM32F767IGK6-176-UFBGA-STMicroelectronics

MDS60MPSA18 Transistor Explained / Description:MJE350 is a PNP high voltage transistor designed for applications where high voltage switching is requiredaudio preamplifiers and any type of low level signals in electronics.front end circuits of radio receivers.

STM32F767IGK6-176-UFBGA-STMicroelectronics

The maximum gain of the transistor is 1500 and the noise figure is only 1.Today I am going to discuss about MPSA18 high gain and low noise transistor with quite interesting features.

STM32F767IGK6-176-UFBGA-STMicroelectronics

Applications:Sensor / Detector ApplicationsRadio RF Applications Under 100MHzAudio RecordersVoice RecordersAudio Preamplifiers AmplifiersAudio Amplifier StagesMany Small Signal AmplificationDriving Loads Under 100mAHow to Safely Long Run in a Circuit:The long life performance and reliability of any equipment or finished product depends on its component therefore the safety long term performance of components must be taken in to account.

push({});Features / Technical Specifications:Package Type: TO-92Transistor Type:  NPNMax Collector Current(IC): 100mAMax Collector-Emitter Voltage (VCE): 45VMax Collector-Base Voltage (VCB): 45VMax Emitter-Base Voltage (VEBO): 5VMax Collector Dissipation (Pc): 625 mWMax Transition Frequency (fT): 100 MHzMinimum Maximum DC Current Gain (hFE): 400– 1500Max Storage Operating temperature Should Be: -55 to +150 CentigradeReplacement and Equivalent:2N5089.It is also recommended to use a suitable base resistor and always solder or attach the transistor in the circuit by checking the right pins.

This post describes the BC546 transistor pinout.the maximum DC current gain value is 800 and the maximum collector dissipation of this transistor is 500 miliWatt due to which this device can be used in many audio and signal amplification purposes.

features and some other useful information about this transistor.collector dissipation of 500 miliWatt.

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